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IEEE Microwave Theory and Techniques Society/Electron
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Welcome to the OC MTT-S/ED-S Home Page!!!! |
This page is designed to inform
"Net-Surfers" in the
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About the Microwave Theory and Techniques Society (MTT-S)
The MTT-S is a transnational society with more than 9,000 members and 80 chapters worldwide. Our society promotes the advancement of microwave theory and its applications, usually at frequencies from 200 MHz to 1 THz and beyond.
For more than 50 years the MTT-S has worked to advance the professional standing of its members and enhance the quality of life for all people through the development and application of microwave technology. As we enter into an exciting future our mission is to continue to understand and influence microwave technology.
About the Electron Devices Society (EDS)
The field of interest for EDS is all aspects of the physics, engineering, theory and phenomena of electron and ion devices such as elemental and compound semiconductor devices, organic and other emerging materials based devices, quantum effect devices, optical devices, displays and imaging devices, photovoltaics , solid-state sensors and actuators, solid-state power devices, high frequency devices, micromechanics, tubes and other vacuum devices.
The society is concerned with research, development, design, and manufacture related to the materials, processing, technology, and applications of such devices, and the scientific, technical and other activities that contribute to the advancement of this field.
About the OC MTT-S/EDS
Joint Chapter
This chapter will aim at providing its members with interesting talks on a
variety of topics in the microwave and electron devices fields.
The meetings are open to anyone. You do not have to be an IEEE member to attend. However, if you are interested in becoming an IEEE and/or an MTT-S and EDS member, please visit the IEEE Home Page . Our chapter meetings provide an open forum for discussion, as well as a place to network with your fellow engineers. Who knows, you might even find a job!!
Who:
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Prof. Jesus A. del Alamo Microsystems Technology Laboratories MIT, Cambridge, MA |
Date: Tuesday, June 12th, 2012
What: III-V's: From THz to CMOS
Where: OC Plaza, 2575 McCabe Way, Irvine, CA
Details:
Seating is Limited, RSVP by
Abstract:
The ability of Si CMOS to continue increasing transistor density while delivering
enhanced logic performance has recently come into question. An end to Moore’s
Law threatens the microelectronics revolution: a historical 50 year run of
exponential progress in the power of electronics that has profoundly impacted
human society. There is a family of materials that perhaps like no other
is capable of addressing this problem: III‐V compound semiconductors. The
capability of some III-Vs to efficiently emit and detect light has made them
widely used in lasers, light‐emitting diodes and detectors for optical communications,
instrumentation, and sensing. A few, notably GaAs, InGaAs and InAs, exhibit
outstanding electron transport properties. Transistors based on these materials
are at the heartof many high‐speed and high‐frequency electronic systems.
In fact, a sizable and mature industry exists that manufactures III‐V integrated
circuits in large volumes for applications asdiverse as smart phones, cellular
base stations, fiber optic systems, wireless local‐area networks, satellite
communications, radar, radioastronomy and many defense systems. The recent
widespread use of handheld devices and their exploding consumption of data
has represented a boon to this industry which is now characterized by highly
automated and rigorous volume manufacturing in relatively large‐area wafers,
sophisticated device and circuit design tools, well established reliability
in many “mission critical” applications, and a layered industrial ecosystem
that includes “pure‐play” foundries, “fabless” design houses and extended
and competitive supply lines. There is no other material class currently
being considered to replace the Si channel in a MOSFET that can line up such
an impressive list of attributes. This paper outlines the case for III‐V
CMOS, it discusses the most critical problems to overcome, and summarizes
recent progress along the way.
Speaker Biography:
Jesus A. del Alamo obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid in 1980 and MS and PhD degrees in Electrical Engineering from Stanford University in 1983 and 1985, respectively. From 1985 to 1988 he was with NTT LSI Laboratories in Atsugi (Japan) and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is currently Donner Professor and MacVicar Faculty Fellow. Prof. del Alamo leads a research program on Si and compound semiconductor transistor technologies for RF, microwave and millimeter wave applications. In the last few years, his students have fabricated nanometer-scale transistors with world record high frequency operation. Prof. del Alamo is also investigating the use of III-V compound semiconductors to enable future ultra-low power CMOS generations. His group has demonstrated that InGaAs quantum-well field-effect transistors have superior scaling logic characteristics. Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the IEEE. He currently serves as Editor of IEEE Electron Device Letters. In 2012 he received the Intel Outstanding Research Award in Emerging Research Devices.
Non-IEEE MEMBERS ALSO WELCOME!!!
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Would you like to suggest a topic and/or
a speaker for a future talk?
Please, submit
your topic/speaker to: info@nanomems-research.com
Chapter Officers
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Chairman Vice-Chair Vice-Chair Secretary |
Héctor J. De Los Rajesh Prabakar
Mohsen Zolghadri |
( NanoMEMS
Research, LLC ) ( Applied Wave Research, Inc.) ( Sabertek, Inc.) |
Inquires may be directed to:
info@nanomems-research.com================================================================== ===============
To Learn About ALL IEEE Orange County Section Activities Go: Here !
